Fluorescence spectrum and charge state control of divacancy qubits via illumination at elevated temperatures in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> silicon carbide-Reference-Cited by-同舟云学术

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Fluorescence spectrum and charge state control of divacancy qubits via illumination at elevated temperatures in 4H silicon carbide

Published:2022-04-06 Issue:16 Volume:105 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Csóré A.,Ivanov I. G.,Son N. T.^ORCID,Gali A.^ORCID

Funder

Nemzeti Kutatási, Fejlesztési és Innovaciós Alap

Horizon 2020 Framework Programme

Vetenskapsrådet

Knut och Alice Wallenbergs Stiftelse

National Excellence Program of Quantum-coherent materials

EU QuantERA Nanospin project

National Quantum Technology Program, and the Quantum Information National Laboratory

Ministry of Innovation and Technology of Hungary

Hungarian Governmental Information Technology Development Agency

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.105.165108/fulltext

Reference59 articles.

1. Ab initio theory of the nitrogen-vacancy center in diamond

2. Room temperature coherent control of defect spin qubits in silicon carbide

3. A silicon carbide room-temperature single-photon source

4. Isolated electron spins in silicon carbide with millisecond coherence times

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near zero-field microwave-free magnetometry with ensembles of nitrogen-vacancy centers in diamond;Physical Review B;2024-06-11

2. Vacancy-related color centers in two-dimensional silicon carbide monolayers;Physical Review Materials;2024-05-03

3. Quantum systems in silicon carbide for sensing applications;Reports on Progress in Physics;2023-12-20

4. High-throughput identification of spin-photon interfaces in silicon;Science Advances;2023-10-06

5. Carbon cluster emitters in silicon carbide;Physical Review B;2023-08-09

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