First-principles modeling of paramagnetic Si dangling-bond defects in amorphousSiO2
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.245201/fulltext
Reference74 articles.
1. Paramagnetic Point Defects in Amorphous Thin Films of SiO2 and Si3 N 4: Updates and Additions
2. The many varieties of E′ centers: a review
3. Observation and electronic characterization of ‘‘new’’E′ center defects in technologically relevant thermal SiO2on Si: An additional complexity in oxide charge trapping
4. Oxygen vacancy model for the E1′ center in SiO2
5. Oxygen vacancy and theE1’center in crystallineSiO2
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