Low-temperature occupation of a donor state resonant with the conduction band inAl0.35Ga0.65As
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.17835/fulltext
Reference24 articles.
1. Donor-related levels in GaAs and AlxGa1-xAs
2. Bistability of theDX center in GaAs and AlxGa1-xAs, and experimental tests for negativeU of theDX level
3. The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs
4. Long‐lifetime photoconductivity effect inn‐type GaAlAs
5. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoionization cross-section of the DX center in Te-doped AlxGa1−xSb;Journal of Applied Physics;1998-01
2. Coexistence of theDXcenter with nonmetastable states of the donor impurity in Si-dopedAlxGa1−xAs: Effects on the low-temperature electron mobility;Physical Review B;1996-04-15
3. Hall and photo-Hall effect measurements on sulphur-doped GaSb;Semiconductor Science and Technology;1995-04-01
4. Coexistence of the DX center and other Si-related electron bound states in;Materials Science and Engineering: B;1994-12
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