Coexistence of the DX center and other Si-related electron bound states in-Reference-Cited by-同舟云学术

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Coexistence of the DX center and other Si-related electron bound states in

Published:1994-12 Issue:1-3 Volume:28 Page:412-415
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Baraldi A.,Frigeri P.,Ghezzi C.,Ghezzi C.,Parisini A.,Bosacchi A.,Franchi S.,Gombia E.,Mosca R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Deep donor levels (DXcenters) in III‐V semiconductors

2. Bistability of theDX center in GaAs and AlxGa1-xAs, and experimental tests for negativeU of theDX level

3. Electron-paramagnetic-resonance measurements of Si-donor-related levels inAlxGa1−xAs

4. Strain splitting of theX-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1−xAs:Si heterostructures

5. Excited states ofDXinGa1−xAlxAs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coexistence of theDXcenter with nonmetastable states of the donor impurity in Si-dopedAlxGa1−xAs: Effects on the low-temperature electron mobility;Physical Review B;1996-04-15

2. Hall and photo-Hall effect measurements on sulphur-doped GaSb;Semiconductor Science and Technology;1995-04-01

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