Electron effective mass enhancement in Ga(AsBi) alloys probed by cyclotron resonance spectroscopy
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.235204/fulltext
Reference32 articles.
1. Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides
2. Long-wavelength emission in photo-pumped GaAs1−xBix laser with low temperature dependence of lasing wavelength
3. Enhanced Terahertz Bandwidth and Power from GaAsBi-based Sources
4. Similar and dissimilar aspects ofIII−Vsemiconductors containingBiversusN
5. Valence band anticrossing in GaBixAs1−x
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