High‐Field Electron‐Drift Velocity in n‐Type Modulation‐Doped GaAs0.96Bi0.04Quantum Well Structure
Author:
Affiliation:
1. Department of Physics Faculty of Science Istanbul University Vezneciler 34134 Istanbul Türkiye
2. Optoelectronics Research Centre Physics Unit Tampere University Korkeakoulunkatu 3 33720 Tampere Finland
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200204
Reference27 articles.
1. Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared
2. Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission
3. Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
4. Thermal annealing effects on optical and structural properties of GaBiAs epilayers: Origin of the thermal annealing-induced redshift in GaBiAs
5. Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures
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