Enhancement of light emission characteristic of a GaAs-based Gunn light emitting diode with a quasi-cavity
Author:
Funder
Istanbul Üniversitesi
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference37 articles.
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3. Highly efficient GaN-based high-power flip-chip light-emitting diodes;Zhou;Opt Express,2019
4. A novel hot carrier-induced blue light-emitting device;Mutlu;J. Alloys Compd.,2021
5. Hot Electron Light Emission from Gunn Domains in Longitudinnally Biased GaAs P-N Junctions and in N-GaAs Epilayers, Hot Carriers in Semiconductors;Balkan,1996
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