Electron-energy-loss investigation of hole-plasmon excitation due to thermal indiffusion boron doping of Si(111) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.18134/fulltext
Reference24 articles.
1. Long-Range Quasielastic Scattering of Low-Energy Electrons by Conduction-Band Surface Plasmons on Si(111)7×7
2. Electron-energy-loss study of the space-charge region at semiconductor surfaces
3. Application of high-resolution electron-energy-loss spectroscopy to MBE grown GaAs(100)
4. Angular resolved surface‐plasmon loss from Si(111) surfaces
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