Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference34 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Potential performance of indium-nitride-based devices
3. InN, latest development and a review of the band-gap controversy
4. The characterization of InN growth under high-pressure CVD conditions
5. InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization
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1. Atomic layer deposition and application of group III nitrides semiconductor and their alloys;Acta Physica Sinica;2024
2. Structural, Compositional, and Thermal Stability Studies on In0.96ga0.04n Epilayers Grown by High Pressure Chemical Vapor Deposition;SSRN Electronic Journal;2022
3. Effect of N2/H2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition;Journal of Vacuum Science & Technology A;2020-12
4. Kinetically stabilized high-temperature InN growth;Journal of Crystal Growth;2020-04
5. A comparative study on magnetic properties of Mo doped AlN, GaN and InN monolayers from first-principles;Physica B: Condensed Matter;2017-11
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