Adsorbed Si on theSi(111)−(7×7)surface studied by scanning tunneling microscopic and molecular-orbital approaches: Stationary and diffusing Si adsorbates-Reference-Cited by-同舟云学术

Adsorbed Si on theSi(111)−(7×7)surface studied by scanning tunneling microscopic and molecular-orbital approaches: Stationary and diffusing Si adsorbates

Published:2002-10-29 Issue:16 Volume:66 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Uchida Hironaga,Watanabe Satoshi,Kuramochi Hiromi,Kim Jooyoung,Nishimura Kazuhiro,Inoue Mitsuteru,Aono Masakazu

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.161316/fulltext

Reference14 articles.

1. Scanning tunneling microscopy study of low‐temperature epitaxial growth of silicon on Si(111)‐(7×7)

2. Homo-epitaxial growth on the Si(111) 7 × 7 surface

3. Direct Measurement of Surface Diffusion Using Atom-Tracking Scanning Tunneling Microscopy

4. Single-atom manipulation on the Si(111)7 × 7 surface by the scanning tunneling microscope (STM)

5. Site-specific measurement of adatom binding energy differences by atom extraction with the STM

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