Valence-band photoemission fromGaAs(100)−c(4×4)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.085309/fulltext
Reference22 articles.
1. The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces
2. Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces
3. Reflectance Anisotropy of GaAs(100): Theory and Experiment
4. Ab initiocalculation of binding and diffusion of a Ga adatom on theGaAs (001)−c(4×4)surface
5. Arsenic Dimer Dynamics during MBE Growth: Theoretical Evidence for a Novel Chemisorption State ofAs2Molecules on GaAs Surfaces
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1. Photoemission from α and β phases of the GaAs(001)-c(4×4) surface;Surface Science;2009-10
2. Surface reconstructions on GaAs(001);Surface Science Reports;2008-07
3. Angle - resolved photoemission study of two phases of the GaAs(100)-c(4×4) surface;Journal of Physics: Conference Series;2008-03-01
4. Atomic and electronic structures of GaAs (001) surface;Russian Physics Journal;2006-10
5. Valence band photoemission from in-situ grown GaAs(100)-c(4 × 4);Czechoslovak Journal of Physics;2006-01
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