Photoemission from α and β phases of the GaAs(001)-c(4×4) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference31 articles.
1. Fractional Stoichiometry of the GaAs(001)c(4×4)Surface: AnIn-SituX-Ray Scattering Study
2. Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy
3. The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces
4. New Structure Model for theGaAs(001)−c(4×4)Surface
5. Two types of structures for the GaAs(001)-c(4×4) surface
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1. Diffusion of Ga adatoms at the surface of GaAs(001)c(4×4)αandβreconstructions;Physical Review B;2015-02-11
2. Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)–c(4×4)α surfaces;Surface Science;2014-07
3. Semiconductor-insulator Interfaces, High κ Dielectrics on (In)GaAs;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-04-25
4. Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition;Applied Surface Science;2013-11
5. Layer-resolved photoelectron diffraction: Electron attenuation anisotropy in GaAs;Journal of Electron Spectroscopy and Related Phenomena;2012-08
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