Angle - resolved photoemission study of two phases of the GaAs(100)-c(4×4) surface-Reference-Cited by-同舟云学术

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Angle - resolved photoemission study of two phases of the GaAs(100)-c(4×4) surface

Published:2008-03-01 Issue:7 Volume:100 Page:072017
ISSN:1742-6596
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Cukr M,Jiříček P,Bartoš I,Sadowski J

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference13 articles.

1. Fractional Stoichiometry of the GaAs(001)c(4×4)Surface: AnIn-SituX-Ray Scattering Study

2. Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy

3. GaAs(001)−c(4×4): A chemisorbed structure

4. Effect of arsenic species (As2 OR As4) on the crystallograpffic and electronic structure of mbe-grown GaAs(001) reconstructed surfaces

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface-Atom Core-Level Shift in GaAs(111)A-2×2;Journal of the Physical Society of Japan;2012-06-15

2. Photoemission from α and β phases of the GaAs(001)-c(4×4) surface;Surface Science;2009-10

3. XPS and STM study of Mn incorporation on the GaAs(001) surface;Superlattices and Microstructures;2009-07

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