Binding sites and diffusion barriers of a Ga adatom on theGaAs(001)−c(4×4)surface from first-principles computations-Reference-Cited by-同舟云学术

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Binding sites and diffusion barriers of a Ga adatom on theGaAs(001)−c(4×4)surface from first-principles computations

Published:2010-10-29 Issue:16 Volume:82 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Roehl J. L.,Kolagatla A.,Ganguri V. K. K.,Khare S. V.,Phaneuf R. J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.165335/fulltext

Reference26 articles.

1. Patterning-based investigation of the length-scale dependence of the surface evolution during multilayer epitaxial growth

2. Transient Evolution of Surface Roughness on Patterned GaAs(001) during Homoepitaxial Growth

3. Evolution of patterned GaAs(001) during homoepitaxial growth: Size versus spacing

4. Temperature-Driven Change in the Unstable Growth Mode on Patterned GaAs(001)

5. Atomic View of Surface Self‐Diffusion: Tungsten on Tungsten

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