Pressure-Induced Changes in the Crystal Structure and Electrical Conductivity of GeV4S8

Author:

Wang Yuejian1ORCID,Shen Zhiwei2,Zhang Dongzhou3ORCID,Wang Lin2,Tsurkan Vladimir45,Prodan Lilian45,Loidl Alois4ORCID,Dumre Bishal B.6,Khare Sanjay V.6

Affiliation:

1. Physics Department, Oakland University, Rochester, Michigan 48309, United States

2. Center for High-Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004, China

3. Partnership for Extreme Crystallography, University of Hawaii at Manoa, Honolulu, Hawaii 96822, United States

4. Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg 86135, Germany

5. Institute of Applied Physics, Moldova State University, MD-2028 Chisinau, Republic of Moldova

6. Department of Physics and Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization (PVIC), University of Toledo, Toledo, Ohio 43606, United States

Funder

Division of Earth Sciences

Agen?ia Na?ionala pentru Cercetare ?i Dezvoltare

U.S. Department of Energy

National Natural Science Foundation of China

Oakland University

Argonne National Laboratory

Publisher

American Chemical Society (ACS)

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