Efficient coupling of disorder states to excitons in an InGaN nanostructure
Author:
Funder
National Science Foundation
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.98.081201/fulltext
Reference36 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
2. How much better are InGaN/GaN nanodisks than quantum wells—Oscillator strength enhancement and changes in optical properties
3. A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates
4. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
5. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
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