Optical spectroscopy of quasimonolayer InAs at the onset of quantum-dot nucleation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.2592/fulltext
Reference23 articles.
1. MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures
2. Multidimensional quantum well laser and temperature dependence of its threshold current
3. Optical properties of InAs quantum dots: Common trends
4. Self-aggregation of quantum dots for very thin InAs layers grown on GaAs
5. A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes
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1. Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition;Applied Physics Letters;2021-05-03
2. Correlation between the structure and luminescence of InAs submonolayer stacked nanostructures;Japanese Journal of Applied Physics;2021-01-14
3. Change in Topography of InAs Submonolayer Nanostructures at the 2D to 3D Transition;physica status solidi (b);2020-12-15
4. Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation;Journal of Applied Physics;2020-02-14
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