Deep-level-noise spectroscopy of ion-implanted polysilicon thin films
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.1958/fulltext
Reference15 articles.
1. Potential Applications of Poly-Silicon as an Electronic-Device Material
2. Polycrystalline Semiconductors
3. Temperature dependence of electrical transport properties ofn‐type solar grade polycrystalline silicon
4. Density of states of grain boundaries in silicon
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1. Electrical Characteristic Analysis Using Low-Frequency Noise in Low-Temperature Polysilicon Thin Film Transistors;Journal of Nanoscience and Nanotechnology;2012-07-01
2. Study of the Drain Leakage Current in Bottom-Gated Nanocrystalline Silicon Thin-Film Transistors by Conduction and Low-Frequency Noise Measurements;IEEE Transactions on Electron Devices;2007-05
3. Predicted electronic properties of polycrystalline silicon from three-dimensional device modeling combined with defect-pool model;Journal of Applied Physics;2002-09
4. Current crowding and 1/f noise in polycrystalline silicon thin film transistors;Journal of Applied Physics;2001-10-15
5. Low-frequency noise in low temperature unhydrogenated polysilicon thin film transistors;Microelectronics Reliability;2000-11
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