Optical response of reconstructed GaP(001) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.11557/fulltext
Reference41 articles.
1. High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy
2. Anisotropic reflectance from semiconductor surfaces for in-situ monitoring in epitaxial growth systems
3. Observation and analysis of epitaxial growth with reflectance-difference spectroscopy
4. (2×4)GaP(001) surface: Atomic structure and optical anisotropy
5. Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition
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1. Deoxidation of (001) III–V semiconductors in metal-organic vapour phase epitaxy;Journal of Applied Physics;2016-08-28
2. Ab-initio study of new Ga-rich GaAs(001) surface (4×4) reconstruction;Surface Science;2013-09
3. Direct observation of dimer flipping at the hydrogen-stabilized GaP(100) and InP(100) surfaces;Physical Review B;2011-04-21
4. Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS;Journal of Crystal Growth;2008-11
5. Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics;Journal of Crystal Growth;2008-06
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