Electron mobility in two-dimensional modulation-dopedIn1−xAlxAs/In1−yGayAs alloy systems
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.11989/fulltext
Reference52 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Electron mobilities in modulation-dopedAlxGa1−xAs/GaAs and pseudomorphicAlxGa1−xAs/InyGa1−yAs quantum-well structures
3. New transport phenomena in a ballistic heterostructure field‐effect transistor
4. Transient transport in bulk Ga0.47ln0.53As and the two‐dimensional electron gas in Ga0.47ln0.53As/Al0.48ln0.52As
5. Monte Carlo calculation of velocity‐field characteristics in GaInAs/InP and GaInAs/AlInAs single‐well heterostructures
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1. Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2013-01
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3. Electron mobility for a model Alx Ga1-x As/GaAs heterojunction under pressure;The European Physical Journal B;2007-07
4. Determination of the alloy scattering potential in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions from magnetotransport measurements;Journal of Materials Science;2005-10-25
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