Electron mobilities in modulation-dopedAlxGa1−xAs/GaAs and pseudomorphicAlxGa1−xAs/InyGa1−yAs quantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.3771/fulltext
Reference25 articles.
1. Electron mobility limits in a two-dimensional electron gas: GaAs-GaAlAs heterostructures
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3. Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures
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