Si(111)(7×7)-Ge and Si(111)(5×5)-Ge surfaces studied by angle-resolved electron-energy-loss spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.6949/fulltext
Reference15 articles.
1. Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion Scattering
2. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
3. Rheed study on the Ge/Si(111) and Si/Ge(111) systems: Reaction of Ge with the Si(111)(7 × 7) surface
4. Dispersion of Surface-Plasmon at Clean Si(001)-2×1 Surface
5. Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy Study
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