Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(111) system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference38 articles.
1. RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots
2. Molecular beam epitaxy of silicon–germanium nanostructures
3. Si/Ge nanostructures
4. Visible photoluminescence from Ge quantum dots
5. Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications
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1. Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures;Journal of Crystal Growth;2024-12
2. Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface;Nanomaterials;2023-01-04
3. High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system;Nanotechnology;2021-12-22
4. Deformation of the Interatomic Bonds in the Upper Layers of the Ge(111) Surface with c(2 × 8), 7 × 7, and 5 × 5 Structures;Journal of Experimental and Theoretical Physics;2021-07
5. Structural changes due to reannealing of Ge thin films prepared by solid phase epitaxial growth on Si (111) surface;Thin Solid Films;2020-09
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