Random electric fields and impurity diffusion inδlayers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.3033/fulltext
Reference10 articles.
1. Be Delta-Doped Layers in GaAs Imaged with Atomic Resolution Using Scanning Tunneling Microscopy
2. Subband physics for a “realistic” δ-doping layer
3. Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C
4. Nonrandom doping and elastic scattering of carriers in semiconductors
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