Be Delta-Doped Layers in GaAs Imaged with Atomic Resolution Using Scanning Tunneling Microscopy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.75.1606/fulltext
Reference14 articles.
1. Doping in III-V Semiconductors
2. Delta- (°-) doping in MBE-grown GaAs: Concept and device application
3. Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study
4. Beryllium δ doping of GaAs grown by molecular beam epitaxy
5. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K
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