Epilayer thickness and strain dependence of Ge(113) surface energies
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.87.155310/fulltext
Reference49 articles.
1. Towards Quantitative Understanding of Formation and Stability of Ge Hut Islands on Si(001)
2. First-principles study of strain stabilization of Ge(105) facet on Si(001)
3. Quantitative Model of Heterogeneous Nucleation and Growth of SiGe Quantum Dot Molecules
4. Influence of surface stress on the equilibrium shape of strained quantum dots
5. Role of Strain-Dependent Surface Energies inGe/Si(100)Island Formation
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1. Arsenic-induced faceted lateral nanoprisms array on Si (1 0 3) surface;Applied Surface Science;2019-01
2. Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate;Nanoscale Research Letters;2017-01-24
3. Strain-Dependent Chemical Reaction on Inhomogeneous Surfaces;The Journal of Physical Chemistry C;2016-10-14
4. Asymmetric shape transitions of epitaxial quantum dots;Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences;2016-06
5. Understanding the effects of strain on morphological instabilities of a nanoscale island during heteroepitaxial growth;Journal of Applied Physics;2015-07-21
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