Quantitative Model of Heterogeneous Nucleation and Growth of SiGe Quantum Dot Molecules
Author:
Funder
U.S. Department of Energy
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.109.106103/fulltext
Reference33 articles.
1. Hybrid superconductor–semiconductor devices made from self-assembled SiGe nanocrystals on silicon
2. Ordering Mechanisms in Epitaxial SiGe Nanoislands
3. Nonequilibrium Composition Profiles of Alloy Quantum Dots and their Correlation with the Growth Mode
4. The characteristics of strain-modulated surface undulations formed upon epitaxial Si1−xGex alloy layers on Si
5. Evolution of surface morphology and strain during SiGe epitaxy
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