Influence of surface stress on the equilibrium shape of strained quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.4566/fulltext
Reference30 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Critical layer thickness for self-assembled InAs islands on GaAs
3. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
4. Structural characterization of (In,Ga)As quantum dots in a GaAs matrix
5. Ultranarrow Luminescence Lines from Single Quantum Dots
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