Critical conductivity exponent of Si:P in a magnetic field
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.4941/fulltext
Reference30 articles.
1. Stress Tuning of the Metal-Insulator Transition at Millikelvin Temperatures
2. Comment on ‘‘Critical behavior of the zero-temperature conductivity in compensated silicon, Si:(P,B)’’
3. The metal-semiconductor transition in three-dimensional disordered systems-reanalysis of recent experiments for and against minimum metallic conductivity
4. The metal-semiconductor transition in amorphous Si1-xCrxfilms-scaling behaviour and minimum metallic conductivity
5. The metal-semiconductor transition in amorphous Si1-xCrxfilms. II. Range of validity of the scaling behaviour of the conductivity, (T,x)= (T/T0(x)), in the semiconducting region and determination of the minimum metallic conductivity from (T,x) in the metallic region
Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Spontaneous Breaking of Time-Reversal Symmetry in Strongly Interacting Two-Dimensional Electron Layers in Silicon and Germanium;Physical Review Letters;2014-06-13
2. Mott-Anderson Transition Controlled by a Magnetic Field in Pyrochlore Molybdate;Physical Review Letters;2006-03-24
3. Critical exponents at the metal-insulator transition in AlPdRe quasicrystals;Physical Review B;2005-01-28
4. Complete Scaling Analysis of the Metal–Insulator Transition in Ge:Ga: Effects of Doping-Compensation and Magnetic Field;Journal of the Physical Society of Japan;2004-01-15
5. Inhomogeneity and the metal-insulator transition for disordered systems;Physical Review B;2003-09-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3