Comment on ‘‘Critical behavior of the zero-temperature conductivity in compensated silicon, Si:(P,B)’’
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.4194/fulltext
Reference5 articles.
1. Critical behavior of the zero-temperature conductivity in compensated silicon, Si:(P,B)
2. The metal-semiconductor transition in amorphous Si1-xCrxfilms-scaling behaviour and minimum metallic conductivity
3. The metal-semiconductor transition in amorphous Si1-xCrxfilms. II. Range of validity of the scaling behaviour of the conductivity, (T,x)= (T/T0(x)), in the semiconducting region and determination of the minimum metallic conductivity from (T,x) in the metallic region
4. The metal-semiconductor transition in three-dimensional disordered systems-reanalysis of recent experiments for and against minimum metallic conductivity
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