The metal-semiconductor transition in amorphous Si1-xCrxfilms. II. Range of validity of the scaling behaviour of the conductivity, (T,x)= (T/T0(x)), in the semiconducting region and determination of the minimum metallic conductivity from (T,x) in the metallic region-Reference-Cited by-同舟云学术

The metal-semiconductor transition in amorphous Si1-xCrxfilms. II. Range of validity of the scaling behaviour of the conductivity, (T,x)= (T/T0(x)), in the semiconducting region and determination of the minimum metallic conductivity from (T,x) in the metallic region

Published:1985-06-20 Issue:17 Volume:18 Page:3337-3355
ISSN:0022-3719
Container-title:Journal of Physics C: Solid State Physics
language:
Short-container-title:J. Phys. C: Solid State Phys.

Author:

Mobius A,Vinzelberg H,Gladun C,Heinrich A,Elefant D,Schumann J,Zies G

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering,Condensed Matter Physics

Link

http://stacks.iop.org/0022-3719/18/i=17/a=011/pdf

Reference37 articles.

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3. Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions

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