Magnetotransport and photoluminescence of two-dimensional hole gases in Si/Si1−xGex/Si heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.18113/fulltext
Reference38 articles.
1. Modulation doping in Ge(x)Si(1−x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentration
2. Boron-doped Si/Ge superlattices and heterostructures
3. Growth studies on Si0.8Ge0.2channel two‐dimensional hole gases
4. Effect of interface quality on the electrical properties ofp‐Si/SiGe two‐dimensional hole gas systems
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1. Line shape analysis of electron–hole plasma electroluminescence in fully strained SiGe epitaxial layers;Journal of Applied Physics;2003-10
2. (SiGe/Si) n /Si quantum wells for enhanced spontaneous emission LEDs;SPIE Proceedings;2001-05-18
3. Influence of molecular hydrogen on Ge island nucleation on Si(001);Journal of Applied Physics;2000-11
4. Optical and electrical characterization of SiGe layers for vertical sub-100 nm MOS transistors;Thin Solid Films;1998-12
5. Influence of grown-in defects on the optical and electrical properties of Si/Si1−xGex/Si heterostructures;Thin Solid Films;1998-12
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