Influence of grown-in defects on the optical and electrical properties of Si/Si1−xGex/Si heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. F. Schäffler, in: J.C. Bean, S. Iyer, K. Wang (Eds.), MRS Symposia Proceedings No. 222, Materials Research Society, Pittsburgh, PA, 1991, p. 433.
2. Observation of deep‐level‐free band edge luminescence and quantum confinement in strained Si1−xGex/Si single quantum well structures grown by solid source Si molecular beam epitaxy
3. Effect of rapid thermal annealing on the photoluminescence properties of SiGe/Si heterostructures
4. Optimization of luminescent properties with respect to crystal growth temperatures for SiGe single quantum wells grown by molecular beam epitaxy
5. Recombination mechanisms via deep levels in RTCVD Si/Si0.85Ge0.15/Si double heterostructures
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Successful Selective Epitaxial Si[sub 1−x]Ge[sub x] Deposition Process for HBT-BiCMOS and High Mobility Heterojunction pMOS Applications;Journal of The Electrochemical Society;2003
2. Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor;Journal of Applied Physics;2001-09
3. In-line and nondestructive analysis of selectively grown epitaxial Si<formula><inf><roman>1-x</roman></inf></formula>Ge<formula><inf><roman>x</roman></inf></formula> and Si/ Si<formula><inf><roman>1-x</roman></inf></formula>Ge<formula><inf><roman>x</roman></inf></formula> layers by spectroscopic ellipsometery and comparison with other established techniques;SPIE Proceedings;2001-04-23
4. Analysis of Selectively Grown Epitaxial Si[sub 1−x]Ge[sub x] by Spectroscopic Ellipsometry and Comparison with Other Established Techniques;Journal of The Electrochemical Society;2000
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