Observation of deep‐level‐free band edge luminescence and quantum confinement in strained Si1−xGex/Si single quantum well structures grown by solid source Si molecular beam epitaxy-Reference-Cited by-同舟云学术

Observation of deep‐level‐free band edge luminescence and quantum confinement in strained Si1−xGex/Si single quantum well structures grown by solid source Si molecular beam epitaxy

Published:1992-10-05 Issue:14 Volume:61 Page:1706-1708
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Usami N.,Fukatsu S.,Shiraki Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.108430

Reference20 articles.

1. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells

2. Electroluminescence from a pseudomorphic Si0.8Ge0.2alloy

3. Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si1-xGex/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy

4. Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si1-xGex/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy

5. Near band-edge photoluminescence from Si1−xGex/Si superlattices grown by molecular-beam epitaxy

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