Successful Selective Epitaxial Si[sub 1−x]Ge[sub x] Deposition Process for HBT-BiCMOS and High Mobility Heterojunction pMOS Applications-Reference-Cited by-同舟云学术

Successful Selective Epitaxial Si[sub 1−x]Ge[sub x] Deposition Process for HBT-BiCMOS and High Mobility Heterojunction pMOS Applications

Published:2003 Issue:10 Volume:150 Page:G638
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Loo R.,Caymax M.,Peytier I.,Decoutere S.,Collaert N.,Verheyen P.,Vandervorst W.,De Meyer K.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference48 articles.

1. A. Gruhle, inProceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (BCTM), IEEE, p. 19 (2001).

2. R. Kuhn, S. Decoutere, M. Caymax, F. Vleugels, E. Verschooten, R. Loo, and J.-L. Loheac, inProceedings of the 29th European Solid-State Device Research Conference (ESSDERC99), p. 436 (1999).

3. S. Decoutere, F. Vleugels, R. Kuhn, R. Loo, M. Caymax, S. Jenei, J. Croon, S. Van Huylenbroeck, M. Da Rold, E. Rosseel, P. Chevalier, and P. Coppens, inProceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (BCTM), IEEE, p. 106 (2000).

4. K. Wolf, W. Klein, A. Berthold, S. Gröndahl, T. Huttner, S. Drexl, M. Seck, and R. Lachner, inProceedings of the 31st European Solid-State Device Research Conference, Frontier Group, p. 447 (2001).

5. J. Böck, T. F. Meister, H. Knapp, D. Zöschg, H. Schäfer,K. Aufinger, M. Wurzer, S. Boguth, M. Franosch, R. Stengl, R. Schreiter, M. Rest, and L. Treitinger, inProceedings of the International Electron Devices Meeting, IEEE, p. 745 (2000).

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