Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment-Reference-Cited by-同舟云学术

Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

Published:2019-02-22 Issue:SB Volume:58 Page:SBBA04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Vohra Anurag,Porret Clement,Kohen David,Folkersma Steven,Bogdanowicz Janusz,Schaekers Marc,Tolle John,Hikavyy Andriy,Capogreco Elena,Witters Liesbeth,Langer Robert,Vandervorst Wilfried,Loo Roger

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SB/a=SBBA04/pdf

Reference34 articles.

1. Si–Ge–Sn alloys: From growth to applications

2. Lasing in direct-bandgap GeSn alloy grown on Si

3. Silicon Surface Passivation Technology for Germanium-Tin P-Channel MOSFETs: Suppression of Germanium and Tin Segregation for Mobility Enhancement

4. (Invited) Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices

5. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

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