Microscopic origin of light emission fromAlyGa1−yN/GaNsuperlattices: Band profile and active site
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.045311/fulltext
Reference33 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
3. Energy band bowing parameter in AlxGa1−xN alloys
4. Origin of Luminescence from InGaN Diodes
5. Defect structure in selectively grown GaN films with low threading dislocation density
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