Dynamic strain-induced giant electroresistance and erasing effect in ultrathin ferroelectric tunnel-junction memory
Author:
Funder
National Natural Science Foundation of China
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.214304/fulltext
Reference44 articles.
1. Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
2. Emerging memories: resistive switching mechanisms and current status
3. Observation of conducting filament growth in nanoscale resistive memories
4. Resistive Switching: Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM (Adv. Mater. 14/2012)
5. In situ TEM Observation of Resistance Switching in Titanate Based Device
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