Quasiparticle band structures, spontaneous polarization, and spin-splitting in noncentrosymmetric few-layer and bulk γ-GeSe-Reference-Cited by-同舟云学术

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Quasiparticle band structures, spontaneous polarization, and spin-splitting in noncentrosymmetric few-layer and bulk γ-GeSe

Published:2021 Issue:30 Volume:9 Page:9683-9691
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Han-gyu¹²³⁴,Choi Hyoung Joon¹²³⁴^ORCID

Affiliation:

1. Department of Physics

2. Yonsei University

3. Seoul 03722

4. Korea

Abstract

Noncentrosymmetric γ-GeSe is a ferroelectric semiconductor with the spin-split valence band.

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology Information

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01800K

Reference61 articles.

1. Ferroelectric Memories

2. A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

3. Organic Nonvolatile Memory Devices Based on Ferroelectricity

4. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

5. High-performance solution-processed polymer ferroelectric field-effect transistors

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1. Unveiling the distinctive mechanical and thermal properties of γ-GeSe;Nano Convergence;2024-07-15

2. First-principles study of the thickness-dependent shift current in γ-GeSe thin layers;Current Applied Physics;2024-07

3. Highly tunable electronic properties in γ-XSe (X = Ge and Sn) bilayer with strain and electric field;Nano Express;2024-04-26

4. Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications;ACS Applied Nano Materials;2024-02-22

5. Exploring the impact of van der Waals-corrected exchange-correlation functional on the physical properties of layered GeSe compound;Computational Materials Science;2024-01

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