First-principles study of the thickness-dependent shift current in γ-GeSe thin layers-Reference-Cited by-同舟云学术

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First-principles study of the thickness-dependent shift current in γ-GeSe thin layers

Published:2024-07 Issue: Volume:63 Page:90-95
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Park Ikpyeong,Kim Jeongwoo^ORCID

Funder

Incheon National University

Publisher

Elsevier BV

Reference21 articles.

1. γ-GeSe: a new hexagonal polymorph from group IV–VI monochalcogenides;Lee;Nano Lett.,2021

2. Excitons and electron–hole liquid state in 2D γ‐phase group‐IV monochalcogenides;Luo;Adv. Funct. Mater.,2020

3. Quasiparticle band structures, spontaneous polarization, and spin-splitting in noncentrosymmetric few-layer and bulk γ-GeSe;Kim;J. Mater. Chem. C,2021

4. Controllable spin splitting in 2D ferroelectric few-layer γ-GeSe;Shi;J. Phys. Condens. Matter,2023

5. Photoconductivity in ferroelectrics;Fridkin;Ferroelectrics,1973

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