Controlling Resistance Switching Performances of Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> Films by Substrate Stress and Potential in Neuromorphic Computing-Reference-Cited by-同舟云学术

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Controlling Resistance Switching Performances of Hf _0.5 Zr _0.5 O ₂ Films by Substrate Stress and Potential in Neuromorphic Computing

Published:2022-03-10 Issue:8 Volume:4 Page:2100244
ISSN:2640-4567
Container-title:Advanced Intelligent Systems
language:en
Short-container-title:Advanced Intelligent Systems

Author:

Xiao Zuoao¹,Yoong Herng Yau²,Cao Jing²,Zhao Zhen¹,Chen Jingsheng²,Yan Xiaobing¹^ORCID

Affiliation:

1. National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices College of Electron and Information Engineering College of Pharmaceutical Science Key Laboratory of Pharmaceutical Quality Control of Hebei Province Hebei University Baoding 071002 P. R. China

2. Department of Materials Science and Engineering National University of Singapore Singapore 117576 Singapore

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aisy.202100244

Reference68 articles.

1. Memristive crossbar arrays for brain-inspired computing

2. Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges

3. Physics of thin-film ferroelectric oxides

4. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

5. Ferroelectric and multiferroic tunnel junctions

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2. High Photoresponsivity and Fast Response Speed Ferroelectric Photomemristor for Artificial Visual System Application;Advanced Functional Materials;2024-08-22

3. Optimizing the Ferroelectric Performance of Hf_0.5Zr_0.5O₂ Epitaxial Film by La_0.67Sr_0.33MnO₃ Capping Layer;Advanced Electronic Materials;2024-08-05

4. High-Performance Artificial Synapse Developed by HZO on (110) NSTO;ACS Applied Nano Materials;2024-08-02

5. Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction;Journal of Applied Physics;2024-04-05

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