Ab initiostudy of the migration of intrinsic defects in3C−SiC
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.205201/fulltext
Reference55 articles.
1. Suppressed diffusion of implanted boron in 4H–SiC
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