Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1325390
Reference16 articles.
1. Phosphorus and boron implantation in 6H–SiC
2. Doping of SiC by Implantation of Boron and Aluminum
3. Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H–SiC
4. Deep level traps in the extended tail region of boron-implanted n-type 6H–SiC
5. Transient-Enhanced Diffusion of Boron in SiC
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