Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1−xBix-Reference-Cited by-同舟云学术

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Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1−xBix

Published:2011-02-16 Issue:7 Volume:83 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kini R. N.,Ptak A. J.,Fluegel B.,France R.,Reedy R. C.,Mascarenhas A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.075307/fulltext

Reference30 articles.

1. Band gap of GaAs1−xBix, 0

2. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy

3. Giant Spin-Orbit Bowing inGaAs1−xBix

4. High-efficiency solar cells from III-V compound semiconductors

5. Heterojunction bipolar transistors implemented with GaInNAs materials

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1. Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer;Physica B: Condensed Matter;2024-07

2. Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces;Journal of Applied Physics;2024-03-27

3. Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt;Scientific Reports;2024-01-16

4. Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature;Materials Science in Semiconductor Processing;2024-01

5. Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt;2023-07-27

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