Realistic tight-binding model for chemisorption: H on Si and Ge (111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.14.1557/fulltext
Reference40 articles.
1. Hydrogen adsorption and surface structures of silicon
2. Chemisorption of atomic hydrogen on the silicon (111) 7 × 7 surface
3. Photoemission measurements of bulk, surface and hydrogen induced states on cleaved Ge(111)
4. Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAs
5. Observation of a Band of Silicon Surface States Containing One Electron Per Surface Atom
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