Photoemission measurements of bulk, surface and hydrogen induced states on cleaved Ge(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. Photoemission Valence-Band Densities of States for Si, Ge, and GaAs Using Synchrotron Radiation
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4. Photoemission spectroscopy using synchrotron radiation. I. Overviews of valence-band structure for Ge, GaAs, GaP, InSb, ZnSe, CdTe, and Agl
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1. Chapter 5 Surface States on Semiconductors;Angle-Resolved Photoemission - Theory and Current Applications;1992
2. Interfacial reaction between disilane and a Ge(111)c(2 × 8) surface;Surface Science;1991-07
3. Quasiparticle surface band structure and photoelectric threshold of Ge(111)-2×1;Physical Review B;1991-05-15
4. Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces;Physica B: Condensed Matter;1991-04
5. Electronic structure of silicon surfaces: Clean and with ordered overlayers;Critical Reviews in Solid State and Materials Sciences;1991-01
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