Interfacial reaction between disilane and a Ge(111)c(2 × 8) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
1. Theoretical study of Si/Ge interfaces
2. X-ray-photoelectron-diffraction investigation of strain at the Si/Ge(001) interface
3. Diffusion of Si into Ge studied by core level photoemission
4. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
5. Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Light emission from ion-bombarded Ge(100) surfaces under continuous germane and silane exposures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-04
2. Growth of a Ge/Si/Ge (100) heterostructure by very low pressure chemical vapour deposition using Si2H6 and GeH4 gases—photoemission and low energy electron diffraction studies;Materials Science and Engineering: B;1994-12
3. Thermal and catalytic decomposition of Si2H6 on a Ge(100)2 × 1 surface: Photoemission and LEED studies;Surface Science;1994-04
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