Ion-gel-gating-induced oxygen vacancy formation in epitaxial La0.5Sr0.5CoO3−δ films from in operando x-ray and neutron scattering-Reference-Cited by-同舟云学术

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Ion-gel-gating-induced oxygen vacancy formation in epitaxial La0.5Sr0.5CoO3−δ films from in operando x-ray and neutron scattering

Published:2017-12-19 Issue:7 Volume:1 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Walter Jeff,Yu Guichuan,Yu Biqiong,Grutter Alexander,Kirby Brian,Borchers Julie,Zhang Zhan,Zhou Hua,Birol Turan,Greven Martin,Leighton Chris

Funder

National Science Foundation

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.1.071403/fulltext

Reference46 articles.

1. Electrostatic modification of novel materials

2. Electrostatic Gating of Ultrathin Films

3. “Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics

4. 2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors

5. High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids

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1. Ferromagnetic Insulating Ground-State Resolved in Mixed Protons and Oxygen Vacancies-Doped La_0.67Sr_0.33CoO₃ Thin Films via Ionic Liquid Gating;ACS Applied Materials & Interfaces;2024-04-16

2. Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite–Brownmillerite Transformation in Electrolyte-Gated Ultrathin La_0.5Sr_0.5CoO_3−δ;ACS Applied Materials & Interfaces;2024-04-02

3. Direct neutron-diffraction-based measurement of magnetic order in brownmillerite SrCoO2.5 and La0.5Sr0.5CoO2.5 thin films;APL Materials;2024-04-01

4. La_0.6Sr_0.4CoO_3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition;Advanced Functional Materials;2024-02-07

5. Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions;Advanced Materials Technologies;2023-08-07

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