2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors-Reference-Cited by-同舟云学术

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2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors

Published:2017-02-03 Issue:3 Volume:3 Page:1600369
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Xie Wei¹,Zhang Xin¹,Leighton Chris¹,Frisbie C. Daniel¹

Affiliation:

1. Department of Chemical Engineering and Materials Science University of Minnesota 421 Washington Ave SE Minneapolis MN 55455 USA

Funder

Office of Naval Research

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201600369

Reference43 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Solution-processable metal oxide semiconductors for thin-film transistor applications

3. Material characteristics and applications of transparent amorphous oxide semiconductors

4. Quantum Hall Effect in Polar Oxide Heterostructures

5. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows

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