Point and extended defects in heteroepitaxial β−Ga2O3 films-Reference-Cited by-同舟云学术

Point and extended defects in heteroepitaxial β−Ga2O3 films

Published:2020-10-14 Issue:10 Volume:4 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Saadatkia P.,Agarwal S.,Hernandez A.,Reed E.,Brackenbury I. D.^ORCID,Codding C. L.,Liedke M. O.^ORCID,Butterling M.^ORCID,Wagner A.^ORCID,Selim F. A.^ORCID

Funder

U.S. Department of Energy

National Science Foundation

Helmholtz-Zentrum Dresden-Rossendorf

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.4.104602/fulltext

Reference70 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors

3. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors

4. Optical properties of LFZ grown β-Ga2O3:Eu3+ fibres

5. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals

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